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High-performance strained Si/SiGe pMOS devices with multiple quantum wells

dc.contributor.authorCollaert, Nadine
dc.contributor.authorVerheyen, Peter
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-14T21:16:00Z
dc.date.available2021-10-14T21:16:00Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6129
dc.sourceIIOimport
dc.titleHigh-performance strained Si/SiGe pMOS devices with multiple quantum wells
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage190
dc.source.endpage194
dc.source.journalIEEE Trans. Nanotechnology
dc.source.issue4
dc.source.volume1
imec.availabilityPublished - imec


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