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Investigation of the high frequency noise figure reduction of SiGe heterojunction bipolar transistors using actualised physical models

dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorPoortmans, Jef
dc.contributor.authorDeferm, Ludo
dc.contributor.authorNijs, Johan
dc.date.accessioned2021-09-29T13:05:32Z
dc.date.available2021-09-29T13:05:32Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/614
dc.sourceIIOimport
dc.titleInvestigation of the high frequency noise figure reduction of SiGe heterojunction bipolar transistors using actualised physical models
dc.typeJournal article
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage157
dc.source.endpage162
dc.source.journalSolid-State Electronics
dc.source.issue1
dc.source.volume38
imec.availabilityPublished - open access


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