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Wear-out of ultra-thin gate oxides during high-field electron tunnelling

dc.contributor.authorDepas, Michel
dc.contributor.authorVermeire, Bert
dc.contributor.authorMertens, Paul
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-29T13:05:45Z
dc.date.available2021-09-29T13:05:45Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/623
dc.sourceIIOimport
dc.titleWear-out of ultra-thin gate oxides during high-field electron tunnelling
dc.typeJournal article
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpage753
dc.source.endpage8
dc.source.journalSemiconductor Science and Technology
dc.source.issue6
dc.source.volume10
imec.availabilityPublished - imec


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