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Lattice expansion induced by Zn channeled implantation in GaN

dc.contributor.authorDing, F.R.
dc.contributor.authorHe, W.H.
dc.contributor.authorVantomme, Andre
dc.contributor.authorZhao, Q.
dc.contributor.authorPipeleers, B.
dc.contributor.authorJacobs, K.
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-14T21:32:18Z
dc.date.available2021-10-14T21:32:18Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6284
dc.sourceIIOimport
dc.titleLattice expansion induced by Zn channeled implantation in GaN
dc.typeJournal article
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.beginpage511
dc.source.endpage514
dc.source.journalMaterials Science in Semiconductor Processing
dc.source.issue6
dc.source.volume5
imec.availabilityPublished - imec


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