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Low-frequency noise behaviour of high-energy electron irradiated Si n+p junction diodes

dc.contributor.authorDubuc, Jean-Paul
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVasina, Petr
dc.contributor.authorClaeys, C.
dc.date.accessioned2021-09-29T13:06:05Z
dc.date.available2021-09-29T13:06:05Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/636
dc.sourceIIOimport
dc.titleLow-frequency noise behaviour of high-energy electron irradiated Si n+p junction diodes
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1016
dc.source.endpage18
dc.source.journalIEE Electronics Letters
dc.source.issue12
dc.source.volume31
imec.availabilityPublished - open access


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