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Cryogenic performance of ultrathin oxide CMOS capacitors with in situ doped p+ poly-Si1-xGex and poly Si gate materials

dc.contributor.authorJacob, A.P.
dc.contributor.authorMyrberg, T.
dc.contributor.authorNur, O.
dc.contributor.authorLundgren, P.
dc.contributor.authorSveinbjornsson, E.O.
dc.contributor.authorYe, L.L.
dc.contributor.authorTholen, A.
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-14T21:53:15Z
dc.date.available2021-10-14T21:53:15Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6426
dc.sourceIIOimport
dc.titleCryogenic performance of ultrathin oxide CMOS capacitors with in situ doped p+ poly-Si1-xGex and poly Si gate materials
dc.typeJournal article
dc.contributor.imecauthorCaymax, Matty
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage942
dc.source.endpage946
dc.source.journalSemiconductor Science and Technology
dc.source.issue9
dc.source.volume17
imec.availabilityPublished - open access


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