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Transient enhanced diffusion of Boron in Si

dc.contributor.authorJain, Suresh
dc.contributor.authorSchoenmaker, Wim
dc.contributor.authorLindsay, Richard
dc.contributor.authorStolk, Peter
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorWillander, M.
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-14T21:53:45Z
dc.date.available2021-10-14T21:53:45Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6429
dc.sourceIIOimport
dc.titleTransient enhanced diffusion of Boron in Si
dc.typeJournal article
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.beginpage8919
dc.source.endpage8941
dc.source.journalJournal of Applied Physics
dc.source.issue11
dc.source.volume91
imec.availabilityPublished - imec


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