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Consistent model for short-channel NMOSFET after hard gate oxide breakdown

dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorVan de Mieroop, Koen
dc.contributor.authorSimons, Veerle
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-14T21:58:48Z
dc.date.available2021-10-14T21:58:48Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6460
dc.sourceIIOimport
dc.titleConsistent model for short-channel NMOSFET after hard gate oxide breakdown
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorSimons, Veerle
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecSimons, Veerle::0000-0001-5714-955X
dc.source.peerreviewno
dc.source.beginpage507
dc.source.endpage513
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue3
dc.source.volume49
imec.availabilityPublished - imec


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