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Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRasras, Mahmoud
dc.contributor.authorVan de Mieroop, Koen
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-14T21:59:09Z
dc.date.available2021-10-14T21:59:09Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6462
dc.sourceIIOimport
dc.titleImpact of MOSFET gate oxide breakdown on digital circuit operation and reliability
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.source.peerreviewno
dc.source.beginpage500
dc.source.endpage506
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue3
dc.source.volume49
imec.availabilityPublished - imec


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