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Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of N-channel silicon MOSFETS

dc.contributor.authorKottantharayil, Anil
dc.contributor.authorMahapatra, S.
dc.contributor.authorEisele, I.
dc.date.accessioned2021-10-14T22:04:57Z
dc.date.available2021-10-14T22:04:57Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6496
dc.sourceIIOimport
dc.titleElectron-electron interaction signature peak in the substrate current versus gate voltage characteristics of N-channel silicon MOSFETS
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage1283
dc.source.endpage1288
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue7
dc.source.volume49
imec.availabilityPublished - imec


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