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Influence of process technology on DC-performance of GaN-based HFETs

dc.contributor.authorMistele, D.
dc.contributor.authorRotter, T.
dc.contributor.authorBougrioua, Z.
dc.contributor.authorMarso, M.
dc.contributor.authorRoll, H.
dc.contributor.authorKlausing, H.
dc.contributor.authorFedler, F.
dc.contributor.authorSemchinova, O.
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorGraul, J.
dc.date.accessioned2021-10-14T22:25:35Z
dc.date.available2021-10-14T22:25:35Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6610
dc.sourceIIOimport
dc.titleInfluence of process technology on DC-performance of GaN-based HFETs
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage452
dc.source.endpage455
dc.source.journalPhysica Status Solidi A
dc.source.issue2
dc.source.volume194
imec.availabilityPublished - open access


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