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Transient effects in PD SOI MOSFETs and potential DRAM applications

dc.contributor.authorOkhonin, S.
dc.contributor.authorNagoga, M.
dc.contributor.authorSallese, J.-M.
dc.contributor.authorFazan, P.
dc.contributor.authorFaynot, J.
dc.contributor.authorPontcharra, J.
dc.contributor.authorCristoloveanu, S.
dc.contributor.authorvan Meer, Hans
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-14T22:37:33Z
dc.date.available2021-10-14T22:37:33Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6670
dc.sourceIIOimport
dc.titleTransient effects in PD SOI MOSFETs and potential DRAM applications
dc.typeJournal article
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1709
dc.source.endpage1713
dc.source.journalSolid-State Electronics
dc.source.issue11
dc.source.volume46
imec.availabilityPublished - open access


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