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Radiation effects on the current-voltage and capacitance- voltage characteristics of advanced P-N junction diodes surrounded by shallow trench isolation

dc.contributor.authorPoyai, Amporn
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorKobayashi, K.
dc.contributor.authorOhyama, Hidenori
dc.date.accessioned2021-10-14T22:51:43Z
dc.date.available2021-10-14T22:51:43Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6740
dc.sourceIIOimport
dc.titleRadiation effects on the current-voltage and capacitance- voltage characteristics of advanced P-N junction diodes surrounded by shallow trench isolation
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage409
dc.source.endpage413
dc.source.journalNuclear Instruments & Methods in Physics Research B
dc.source.volume186
imec.availabilityPublished - imec
imec.internalnotesSymp. B on Defect Engineering of Advanced Semiconductor Devices, E-MRS Spring Conference. June 2001; Strasbourg, France


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