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Diode analysis of deep submicron CMOS p-well implantation damage

dc.contributor.authorPoyai, Amporn
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorRooyackers, Rita
dc.date.accessioned2021-10-14T22:52:09Z
dc.date.available2021-10-14T22:52:09Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6742
dc.sourceIIOimport
dc.titleDiode analysis of deep submicron CMOS p-well implantation damage
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage266
dc.source.endpage277
dc.source.conferenceHigh Purity Silicon VII
dc.source.conferencedate20/10/2002
dc.source.conferencelocationSalt Lake City, UT USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Series Proceedings; PV 2002-20


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