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Enhancement of ALCVD(TM) TiN growth on Si-O-C and a-SiC:H films by O2-based plasma treatments

dc.contributor.authorSatta, Alessandra
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorRichard, Olivier
dc.contributor.authorVantomme, Andre
dc.contributor.authorBender, Hugo
dc.contributor.authorConard, Thierry
dc.contributor.authorMaex, Karen
dc.contributor.authorLi, W.M.
dc.contributor.authorElers, K. E.
dc.contributor.authorHaukka, S.
dc.date.accessioned2021-10-14T23:02:05Z
dc.date.available2021-10-14T23:02:05Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6789
dc.sourceIIOimport
dc.titleEnhancement of ALCVD(TM) TiN growth on Si-O-C and a-SiC:H films by O2-based plasma treatments
dc.typeJournal article
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.beginpage59
dc.source.endpage69
dc.source.journalMicroelectronic Engineering
dc.source.issue1_2
dc.source.volume60
imec.availabilityPublished - imec
imec.internalnotes5th Workshop on Materials for Advanced Metallization. March 2001; Sigtuna, Sweden


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