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Physical charge transport models for anomalous leakage current in floating gate-based nonvolatile memory cells

dc.contributor.authorSchuler, Franz
dc.contributor.authorDegraeve, Robin
dc.contributor.authorHendrickx, Paul
dc.contributor.authorWellekens, Dirk
dc.date.accessioned2021-10-14T23:07:05Z
dc.date.available2021-10-14T23:07:05Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6812
dc.sourceIIOimport
dc.titlePhysical charge transport models for anomalous leakage current in floating gate-based nonvolatile memory cells
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorHendrickx, Paul
dc.contributor.imecauthorWellekens, Dirk
dc.source.peerreviewno
dc.source.beginpage80
dc.source.endpage88
dc.source.journalIEEE Trans. Device and Materials Reliability
dc.source.issue4
dc.source.volume2
imec.availabilityPublished - imec


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