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Characterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures <= 550 degrees C

dc.contributor.authorSedky, S.
dc.contributor.authorWitvrouw, Ann
dc.contributor.authorCaymax, Matty
dc.contributor.authorSaerens, A.
dc.contributor.authorVan Houtte, P.
dc.date.accessioned2021-10-14T23:07:32Z
dc.date.available2021-10-14T23:07:32Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6814
dc.sourceIIOimport
dc.titleCharacterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures <= 550 degrees C
dc.typeJournal article
dc.contributor.imecauthorCaymax, Matty
dc.source.peerreviewno
dc.source.beginpage1580
dc.source.endpage1586
dc.source.journalJournal of Materials Research
dc.source.issue7
dc.source.volume17
imec.availabilityPublished - imec


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