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X-valley influence on hot free electron absorption and optical nonlinearities at 10.6μm in highly doped n-GaAs

dc.contributor.authorShkerdin, G.
dc.contributor.authorStiens, J.
dc.contributor.authorVounckx, Roger
dc.date.accessioned2021-10-14T23:09:40Z
dc.date.available2021-10-14T23:09:40Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6824
dc.sourceIIOimport
dc.titleX-valley influence on hot free electron absorption and optical nonlinearities at 10.6μm in highly doped n-GaAs
dc.typeJournal article
dc.contributor.imecauthorVounckx, Roger
dc.source.peerreviewno
dc.source.beginpage29
dc.source.endpage38
dc.source.journalEuropean Physical Journal - Applied Physics
dc.source.issue1
dc.source.volume19
imec.availabilityPublished - imec


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