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DLTS and PL studies of proton radiation defects in TiN-doped FZ silicon

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorPrivitera, Vittorio
dc.contributor.authorCoffa, S.
dc.contributor.authorKokkoris, M.
dc.contributor.authorKossionides, E.
dc.contributor.authorFanourakis, G.
dc.contributor.authorLarsen, A. N.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-14T23:11:26Z
dc.date.available2021-10-14T23:11:26Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6832
dc.sourceIIOimport
dc.titleDLTS and PL studies of proton radiation defects in TiN-doped FZ silicon
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage19
dc.source.endpage23
dc.source.journalNuclear Instruments & Methods in Physics Research B
dc.source.volume186
imec.availabilityPublished - imec
imec.internalnotesSymp. B on Defect Engineering of Advanced Semiconductor Devices, E-MRS Spring Conference. June 2001; Strasbourg, France


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