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Silicide-induced stress in Si: origin and consequences for MOS technologies

dc.contributor.authorSteegen, An
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-14T23:14:41Z
dc.date.available2021-10-14T23:14:41Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6847
dc.sourceIIOimport
dc.titleSilicide-induced stress in Si: origin and consequences for MOS technologies
dc.typeJournal article
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpage1
dc.source.endpage53
dc.source.journalMaterials Science & Engineering R. Reports
dc.source.issue1
dc.source.volume38
imec.availabilityPublished - imec


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