Silicide-induced stress in Si: origin and consequences for MOS technologies
dc.contributor.author | Steegen, An | |
dc.contributor.author | Maex, Karen | |
dc.date.accessioned | 2021-10-14T23:14:41Z | |
dc.date.available | 2021-10-14T23:14:41Z | |
dc.date.issued | 2002 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/6847 | |
dc.source | IIOimport | |
dc.title | Silicide-induced stress in Si: origin and consequences for MOS technologies | |
dc.type | Journal article | |
dc.contributor.imecauthor | Maex, Karen | |
dc.source.peerreview | no | |
dc.source.beginpage | 1 | |
dc.source.endpage | 53 | |
dc.source.journal | Materials Science & Engineering R. Reports | |
dc.source.issue | 1 | |
dc.source.volume | 38 | |
imec.availability | Published - imec |
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