Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation
| dc.contributor.author | Janssens, Koenraad | |
| dc.contributor.author | Van Der Biest, O. | |
| dc.contributor.author | Vanhellemont, Jan | |
| dc.contributor.author | Maes, Herman | |
| dc.contributor.author | Hull, R. | |
| dc.date.accessioned | 2021-09-29T13:07:52Z | |
| dc.date.available | 2021-09-29T13:07:52Z | |
| dc.date.issued | 1995 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/691 | |
| dc.source | IIOimport | |
| dc.title | Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation | |
| dc.type | Journal article | |
| dc.source.peerreview | no | |
| dc.source.beginpage | 1530 | |
| dc.source.endpage | 3 | |
| dc.source.journal | Appl. Phys. Lett. | |
| dc.source.issue | 11 | |
| dc.source.volume | 67 | |
| imec.availability | Published - imec |
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