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Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model

dc.contributor.authorVandamme, Ewout
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorvan Dinther, Cees
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorDeferm, Ludo
dc.date.accessioned2021-10-14T23:41:12Z
dc.date.available2021-10-14T23:41:12Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6967
dc.sourceIIOimport
dc.titleDevelopment of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model
dc.typeJournal article
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorDeferm, Ludo
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage353
dc.source.endpage360
dc.source.journalSolid-State Electronics
dc.source.issue3
dc.source.volume46
imec.availabilityPublished - open access


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