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High power performances of AlGaN/GaN HEMTs on Sapphire Substrate at Ft=4GHz

dc.contributor.authorVellas, N.
dc.contributor.authorGaquire, C.
dc.contributor.authorGuhel, Y.
dc.contributor.authorWerquin, M.
dc.contributor.authorDucatteau, D.
dc.contributor.authorBoudart, B.
dc.contributor.authorde Jaeger, J.C.
dc.contributor.authorBougrioua, Z.
dc.contributor.authorGermain, Marianne
dc.contributor.authorLeys, Maarten
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-14T23:50:27Z
dc.date.available2021-10-14T23:50:27Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7007
dc.sourceIIOimport
dc.titleHigh power performances of AlGaN/GaN HEMTs on Sapphire Substrate at Ft=4GHz
dc.typeProceedings paper
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.beginpage25
dc.source.endpage28
dc.source.conferenceProceedings of the IEEE GaAs 2002 Conference
dc.source.conferencedate23/09/2002
dc.source.conferencelocationMilano Italy
imec.availabilityPublished - imec


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