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Two types of electron traps generated in the gate silicon dioxide

dc.contributor.authorZhang, W.D.
dc.contributor.authorZhang, J.F.
dc.contributor.authorLalor, M.
dc.contributor.authorBurton, D.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.date.accessioned2021-10-15T00:12:10Z
dc.date.available2021-10-15T00:12:10Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7096
dc.sourceIIOimport
dc.titleTwo types of electron traps generated in the gate silicon dioxide
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.source.peerreviewno
dc.source.beginpage1868
dc.source.endpage1875
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue11
dc.source.volume49
imec.availabilityPublished - imec


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