Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO2 gate dielectric layers
| dc.contributor.author | Alam, M.A. | |
| dc.contributor.author | Green, Martin | |
| dc.date.accessioned | 2021-10-15T03:58:42Z | |
| dc.date.available | 2021-10-15T03:58:42Z | |
| dc.date.issued | 2003 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/7128 | |
| dc.source | IIOimport | |
| dc.title | Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO2 gate dielectric layers | |
| dc.type | Journal article | |
| dc.source.peerreview | no | |
| dc.source.beginpage | 3403 | |
| dc.source.endpage | 3413 | |
| dc.source.journal | Journal of Applied Physics | |
| dc.source.issue | 5 | |
| dc.source.volume | 94 | |
| imec.availability | Published - imec |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
|
There are no files associated with this item. |
|||