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Growth of epitaxial b-FeSi2 on (100) silicon using Fe-Ti-Si diffusion couples

dc.contributor.authorKyllesbech Larsen, K.
dc.contributor.authorTavares, J.
dc.contributor.authorBender, Hugo
dc.contributor.authorDonaton, R. A.
dc.contributor.authorLauwers, A.
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-09-29T13:08:43Z
dc.date.available2021-09-29T13:08:43Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/712
dc.sourceIIOimport
dc.titleGrowth of epitaxial b-FeSi2 on (100) silicon using Fe-Ti-Si diffusion couples
dc.typeJournal article
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpage599
dc.source.endpage601
dc.source.journalJ. Appl. Phys.
dc.source.issue1
dc.source.volume78
imec.availabilityPublished - imec


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