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High-Q RF inductors on 20 Ohm.cm silicon realized through wafer-level packaging techniques

dc.contributor.authorCarchon, Geert
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorBeyne, Eric
dc.date.accessioned2021-10-15T04:05:53Z
dc.date.available2021-10-15T04:05:53Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7280
dc.sourceIIOimport
dc.titleHigh-Q RF inductors on 20 Ohm.cm silicon realized through wafer-level packaging techniques
dc.typeJournal article
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecDe Raedt, Walter::0000-0002-7117-7976
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.source.peerreviewno
dc.source.beginpage26
dc.source.endpage30
dc.source.journalMicroelectronics International
dc.source.issue1
dc.source.volume20
imec.availabilityPublished - imec


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