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Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

dc.contributor.authorCarter, Richard
dc.contributor.authorCartier, Eduard
dc.contributor.authorKerber, Andreas
dc.contributor.authorPantisano, Luigi
dc.contributor.authorSchram, Tom
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T04:06:22Z
dc.date.available2021-10-15T04:06:22Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7286
dc.sourceIIOimport
dc.titlePassivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks
dc.typeJournal article
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage533
dc.source.endpage535
dc.source.journalApplied Physics Letters
dc.source.issue3
dc.source.volume83
imec.availabilityPublished - imec


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