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High performance Si/SiGE pMOSFETs fabricated in a standard CMOS process technology

dc.contributor.authorCollaert, Nadine
dc.contributor.authorVerheyen, Peter
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-15T04:10:26Z
dc.date.available2021-10-15T04:10:26Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7333
dc.sourceIIOimport
dc.titleHigh performance Si/SiGE pMOSFETs fabricated in a standard CMOS process technology
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage1173
dc.source.endpage1177
dc.source.journalSolid-State Electronics
dc.source.issue7
dc.source.volume47
imec.availabilityPublished - imec
imec.internalnotesPaper from: 3rd Int. Workshop on Ultimate Integration of Silicon; March 2002; Munich, Germany


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