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New insights into the relation between channel hot carrier degradation and oxide breakdown in short channel nMOSFETs

dc.contributor.authorCrupi, Felice
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDe Keersgieter, An
dc.date.accessioned2021-10-15T04:13:54Z
dc.date.available2021-10-15T04:13:54Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7367
dc.sourceIIOimport
dc.titleNew insights into the relation between channel hot carrier degradation and oxide breakdown in short channel nMOSFETs
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.source.peerreviewno
dc.source.beginpage278
dc.source.endpage280
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume24
imec.availabilityPublished - imec


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