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Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions

dc.contributor.authorCzerwinski, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPoyai, Amporn
dc.contributor.authorClaeys, Cor
dc.contributor.authorOhyama, H.
dc.date.accessioned2021-10-15T04:14:33Z
dc.date.available2021-10-15T04:14:33Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7373
dc.sourceIIOimport
dc.titleGated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage278
dc.source.endpage287
dc.source.journalIEEE Trans. Nuclear Science
dc.source.issue2
dc.source.volume50
imec.availabilityPublished - imec


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