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Influence of low-k dry etch chemistries on the properties of Copper and a TA-based diffusion barrier

dc.contributor.authorErnur, Didem
dc.contributor.authorIacopi, Francesca
dc.contributor.authorCarbonell, Laure
dc.contributor.authorStruyf, Herbert
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-15T04:38:40Z
dc.date.available2021-10-15T04:38:40Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7556
dc.sourceIIOimport
dc.titleInfluence of low-k dry etch chemistries on the properties of Copper and a TA-based diffusion barrier
dc.typeJournal article
dc.contributor.imecauthorErnur, Didem
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpage285
dc.source.endpage292
dc.source.journalMicroelectronic Engineering
dc.source.issue2_4
dc.source.volume70
imec.availabilityPublished - imec


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