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VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices

dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorBlomme, Pieter
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-15T04:49:55Z
dc.date.available2021-10-15T04:49:55Z
dc.date.issued2003-02
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7625
dc.sourceIIOimport
dc.titleVARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices
dc.typeJournal article
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage99
dc.source.endpage101
dc.source.journalIEEE Electron Device Letters
dc.source.issue2
dc.source.volume24
imec.availabilityPublished - imec


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