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Enhanced tunneling current effect for nonvolatile memory applications

dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorBlomme, Pieter
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-15T04:50:06Z
dc.date.available2021-10-15T04:50:06Z
dc.date.issued2003-04
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7626
dc.sourceIIOimport
dc.titleEnhanced tunneling current effect for nonvolatile memory applications
dc.typeJournal article
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage2020
dc.source.endpage2024
dc.source.journalJapanese Journal of Applied Physics. Part 1: Regular Papers
dc.source.issue4B
dc.source.volume42
imec.availabilityPublished - imec


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