Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
dc.contributor.author | Jacobs, K. | |
dc.contributor.author | Van Daele, B. | |
dc.contributor.author | Leys, Maarten | |
dc.contributor.author | Moerman, Ingrid | |
dc.contributor.author | Van Tendeloo, G. | |
dc.date.accessioned | 2021-10-15T05:00:17Z | |
dc.date.available | 2021-10-15T05:00:17Z | |
dc.date.issued | 2003 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/7683 | |
dc.source | IIOimport | |
dc.title | Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures | |
dc.type | Journal article | |
dc.contributor.imecauthor | Moerman, Ingrid | |
dc.contributor.orcidimec | Moerman, Ingrid::0000-0003-2377-3674 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 498 | |
dc.source.endpage | 502 | |
dc.source.journal | Journal of Crystal Growth | |
dc.source.volume | 248 | |
imec.availability | Published - open access |