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Improved AlGaN/GaN high mobility transistor using AIN interlayers

dc.contributor.authorJiménez, A.
dc.contributor.authorBougrioua, Z.
dc.contributor.authorTirado, J.M.
dc.contributor.authorBraña de Cal, Alejandro F.
dc.contributor.authorCalleja, E.
dc.contributor.authorMuñoz, E.
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-15T05:02:01Z
dc.date.available2021-10-15T05:02:01Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7693
dc.sourceIIOimport
dc.titleImproved AlGaN/GaN high mobility transistor using AIN interlayers
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.beginpage4827
dc.source.endpage4829
dc.source.journalApplied Physics Letters
dc.source.issue26
dc.source.volume82
imec.availabilityPublished - imec


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