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Enhanced low temperature electrical activation of B in Si

dc.contributor.authorKalyanaraman, R.
dc.contributor.authorVenezia, Vincent
dc.contributor.authorPelaz, L.
dc.contributor.authorHaynes, T.E.
dc.contributor.authorGossmann, H.J.L.
dc.contributor.authorRafferty, C.S.
dc.date.accessioned2021-10-15T05:06:48Z
dc.date.available2021-10-15T05:06:48Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7719
dc.sourceIIOimport
dc.titleEnhanced low temperature electrical activation of B in Si
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage215
dc.source.endpage217
dc.source.journalApplied Physics Letters
dc.source.issue2
dc.source.volume82
imec.availabilityPublished - imec


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