Show simple item record

Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics

dc.contributor.authorKerber, Andreas
dc.contributor.authorCartier, Eduard
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorKim, Young-Chang
dc.contributor.authorHou, A.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.authorSchwalke, U.
dc.date.accessioned2021-10-15T05:08:48Z
dc.date.available2021-10-15T05:08:48Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7728
dc.sourceIIOimport
dc.titleOrigin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage87
dc.source.endpage89
dc.source.journalIEEE Electron Device Letters
dc.source.issue2
dc.source.volume24
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record