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Influence of device engineering on the analog and RF performances of SOI MOSFETs

dc.contributor.authorKilchytska, V.
dc.contributor.authorNève, A.
dc.contributor.authorVancaillie, L.
dc.contributor.authorLevacq, D.
dc.contributor.authorAdriaensen, S.
dc.contributor.authorvan Meer, Hans
dc.contributor.authorRaynaud, C.
dc.contributor.authorDehan, M.
dc.contributor.authorRaskin, J.P.
dc.contributor.authorFlandre, D.
dc.date.accessioned2021-10-15T05:10:30Z
dc.date.available2021-10-15T05:10:30Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7737
dc.sourceIIOimport
dc.titleInfluence of device engineering on the analog and RF performances of SOI MOSFETs
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage577
dc.source.endpage588
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue3
dc.source.volume50
imec.availabilityPublished - imec


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