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Modeling of clustering reaction and diffusion of boron in strained Si1-xGex epitaxial layers

dc.contributor.authorKrishnasamy, Rajendran
dc.contributor.authorVillaneuva, D.
dc.contributor.authorMoens, P.
dc.contributor.authorSchoenmaker, Wim
dc.date.accessioned2021-10-15T05:14:36Z
dc.date.available2021-10-15T05:14:36Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7758
dc.sourceIIOimport
dc.titleModeling of clustering reaction and diffusion of boron in strained Si1-xGex epitaxial layers
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage835
dc.source.endpage839
dc.source.journalSolid-State Electronics
dc.source.issue5
dc.source.volume47
imec.availabilityPublished - open access


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