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Successful selective epitaxial Si1-xGex deposition process for HBT-BiCMOS and high-mobility hetero-channel pMOS applications

dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorPeytier, Ivan
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorCollaert, Nadine
dc.contributor.authorVerheyen, Peter
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-15T05:26:59Z
dc.date.available2021-10-15T05:26:59Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7819
dc.sourceIIOimport
dc.titleSuccessful selective epitaxial Si1-xGex deposition process for HBT-BiCMOS and high-mobility hetero-channel pMOS applications
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpageG638
dc.source.endpageG647
dc.source.journalJournal of Electrochemical Society
dc.source.issue10
dc.source.volume150
imec.availabilityPublished - imec


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