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Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect tranistors

dc.contributor.authorLukyanchikova, N.B.
dc.contributor.authorPetricuk, M.V.
dc.contributor.authorGarbar, P.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T05:30:36Z
dc.date.available2021-10-15T05:30:36Z
dc.date.issued2003-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7836
dc.sourceIIOimport
dc.titleElectron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect tranistors
dc.typeJournal article
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage4461
dc.source.endpage4469
dc.source.journalJournal of Applied Physics
dc.source.issue7
dc.source.volume94
imec.availabilityPublished - imec
imec.internalnotes


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