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1.7-1.9 μm InxGa1-xAs/InyAl1-yAs light-emitting diodes lattice-mismatched grown on GaAs

dc.contributor.authorMurti, M. R.
dc.contributor.authorGrietens, Bob
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-09-29T13:12:20Z
dc.date.available2021-09-29T13:12:20Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/784
dc.sourceIIOimport
dc.title1.7-1.9 μm InxGa1-xAs/InyAl1-yAs light-emitting diodes lattice-mismatched grown on GaAs
dc.typeJournal article
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecVan Hoof, Chris::0000-0002-4645-3326
dc.source.peerreviewno
dc.source.beginpage578
dc.source.endpage80
dc.source.journalJ. Appl. Phys.
dc.source.issue1
dc.source.volume78
imec.availabilityPublished - imec


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