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Evidence of an impurity band at an n-GaN/sapphire interface

dc.contributor.authorMavroidis, C.
dc.contributor.authorHarris, J.J.
dc.contributor.authorJackman, R.B.
dc.contributor.authorBougrioua, Z.
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-15T05:40:07Z
dc.date.available2021-10-15T05:40:07Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7881
dc.sourceIIOimport
dc.titleEvidence of an impurity band at an n-GaN/sapphire interface
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1127
dc.source.endpage1132
dc.source.journalDiamond and Related Materials
dc.source.issue3_7
dc.source.volume12
imec.availabilityPublished - open access
imec.internalnotes13th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide; Sept. 2002; Granada, Spain


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