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Linear kink effect induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs

dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T05:42:16Z
dc.date.available2021-10-15T05:42:16Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7891
dc.sourceIIOimport
dc.titleLinear kink effect induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs
dc.typeJournal article
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1675
dc.source.endpage1682
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue7
dc.source.volume50
imec.availabilityPublished - imec


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