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Impact of the high vertical electric field on low-frequency noise in thin-gate oxide MOSFETs

dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T05:42:54Z
dc.date.available2021-10-15T05:42:54Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7894
dc.sourceIIOimport
dc.titleImpact of the high vertical electric field on low-frequency noise in thin-gate oxide MOSFETs
dc.typeJournal article
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage2520
dc.source.endpage2527
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue12
dc.source.volume50
imec.availabilityPublished - imec


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