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Degradation of Si1-xGex epitaxial heterojunction bipolar transistors by 1-MeV fast neutrons

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorTakami, Y.
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorSunaga, H.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-09-29T13:13:04Z
dc.date.available2021-09-29T13:13:04Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/796
dc.sourceIIOimport
dc.titleDegradation of Si1-xGex epitaxial heterojunction bipolar transistors by 1-MeV fast neutrons
dc.typeJournal article
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.beginpage1550
dc.source.endpage1557
dc.source.journalIEEE Trans. Nuclear Science
dc.source.issue6, pt.1
dc.source.volume42
imec.availabilityPublished - imec
imec.internalnotesProceedings of the 32nd Annual International Nuclear and Space Radiation Effects Conference (NSREC '95). Madison, Wisconsin, USA.


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