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Irradiation induced lattice defects in Si1-xGex devices and their effect on device performance

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorTakami, Y.
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorSunaga, H.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorCaymax, Matty
dc.contributor.authorClauws, P.
dc.date.accessioned2021-09-29T13:13:08Z
dc.date.available2021-09-29T13:13:08Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/797
dc.sourceIIOimport
dc.titleIrradiation induced lattice defects in Si1-xGex devices and their effect on device performance
dc.typeJournal article
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage429
dc.source.endpage435
dc.source.journalMaterials Science and Technology
dc.source.issue4
dc.source.volume11
imec.availabilityPublished - open access
imec.internalnotesPaper from the 1st International Conference on Materials for Microelectronics. 17-19 October 1994. Barcelona, Spain.


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