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Investigation of iridium as a gate electrode for deep sub-micron CMOS technology

dc.contributor.authorPawlak, M.A.
dc.contributor.authorSchram, Tom
dc.contributor.authorMaex, Karen
dc.contributor.authorVantomme, Andre
dc.date.accessioned2021-10-15T06:04:27Z
dc.date.available2021-10-15T06:04:27Z
dc.date.issued2003-11
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7991
dc.sourceIIOimport
dc.titleInvestigation of iridium as a gate electrode for deep sub-micron CMOS technology
dc.typeJournal article
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.source.peerreviewno
dc.source.beginpage373
dc.source.endpage376
dc.source.journalMicroelectronic Engineering
dc.source.issue2_4
dc.source.volume70
imec.availabilityPublished - imec


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