Show simple item record

Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures

dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorBojarczuk, N.A.
dc.contributor.authorCopel, M.
dc.contributor.authorGusev, E.P.
dc.contributor.authorKarasinski, J.
dc.contributor.authorGuha, S.
dc.date.accessioned2021-10-15T06:19:14Z
dc.date.available2021-10-15T06:19:14Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8056
dc.sourceIIOimport
dc.titlePhysical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures
dc.typeJournal article
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.source.peerreviewno
dc.source.beginpage3912
dc.source.endpage3919
dc.source.journalJournal of Applied Physics
dc.source.issue7
dc.source.volume93
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record